IKD06N60RATMA1 vs IGB50N60TATMA1 Vergleich
Detaillierter Direktvergleich von IKD06N60RATMA1 von Infineon und IGB50N60TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IKD06N60RATMA1 | IGB50N60TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $2,20 |
| Transistortyp | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | — |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | Trench + Field-Stop |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Betriebstemperaturbereich | -40C to +150C (junction) | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK / TO-263) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | — | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Betriebs-Sperrschichttemperatur | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| MSL-Level | — | 1 |