IKD06N60RATMA1 vs IGB50N60TATMA1 Comparison
Detailed side-by-side comparison of IKD06N60RATMA1 by Infineon and IGB50N60TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD06N60RATMA1 | IGB50N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $2.20 |
| Transistor Type | IGBT - Trench Field Stop with anti-parallel diode | β |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | β |
| Continuous Collector Current (IC) at TC=25C | 12 A | β |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | β |
| Maximum Power Dissipation | 100 W | β |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | β |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | Trench + Field-Stop |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | β |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | β |
| Operating Temperature Range | -40C to +150C (junction) | β |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK / TO-263) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | β |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | Trenchstop IGBT3 |
| Collector-Emitter Voltage (VCES) | β | 600 V |
| Continuous Collector Current (IC) at TC=25Β°C | β | 100 A |
| Continuous Collector Current (IC) at TC=100Β°C | β | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | β | 150 A |
| Total Power Dissipation (Ptot) at TC=25Β°C | β | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | β | 5.0 V (typ), 6.5 V (max) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | β | 1.5 V (typ at VGE=15V, IC=50A, TJ=25Β°C) |
| Short-Circuit Withstand Time (tsc) | β | 5 Β΅s min at VCE=360V, TJβ€150Β°C |
| Operating Junction Temperature | β | -40 Β°C to +150 Β°C |
| Co-packaged Diode | β | Anti-parallel EmCon3 diode |
| MSL Level | β | 1 |