IKD06N60RATMA1 vs IGB50N60TATMA1 비교

다음의 상세 나란히 비교: IKD06N60RATMA1 제조: Infineon 및 IGB50N60TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IKD06N60RATMA1 IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 ✓ 활성

사양 비교

파라미터 IKD06N60RATMA1 IGB50N60TATMA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.89 $2.20
트랜지스터 유형 IGBT - Trench Field Stop with anti-parallel diode —
Configuration Single with built-in diode Single
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25C 12 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] —
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] —
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) Trench + Field-Stop
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
동작 온도 범위 -40C to +150C (junction) —
패키지 PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK / TO-263)
실장 유형 Surface Mount Surface Mount
핀 수 3 (2 + Tab) —
RoHS 상태 Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — Trenchstop IGBT3
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC) at TC=25°C — 100 A
Continuous Collector Current (IC) at TC=100°C — 50 A
Pulsed Collector Current (ICM, tp limited by Tjmax) — 150 A
Total Power Dissipation (Ptot) at TC=25°C — 333 W
Gate-Emitter Threshold Voltage (VGE(th)) — 5.0 V (typ), 6.5 V (max)
컬렉터-이미터 포화 전압 (Vce(sat)) — 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C)
Short-Circuit Withstand Time (tsc) — 5 µs min at VCE=360V, TJ≤150°C
동작 접합 온도 — -40 °C to +150 °C
Co-packaged Diode — Anti-parallel EmCon3 diode
MSL 레벨 — 1

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