IPB100N12S305ATMA2 vs IRFB3207ZPBF Comparación
Comparación detallada lado a lado de IPB100N12S305ATMA2 por Infineon y IRFB3207ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB100N12S305ATMA2 | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 5 120V | HEXFET |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Junction Temperature | 175 °C | — |
| Avalanche Energy (EAS) | 1445 mJ | — |
| Encapsulado / Carcasa | PG-TO263-3-2 (D2PAK) | — |
| Tipo de montaje | Surface Mount | Through Hole |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | N/A (through-hole) |
| Part Number | — | IRFB3207ZPBF |
| Technology | — | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Encapsulado | — | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |