IPB100N12S305ATMA2 vs IRFB3207ZPBF Comparaison
Comparaison détaillée côte à côte de IPB100N12S305ATMA2 par Infineon et IRFB3207ZPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPB100N12S305ATMA2 | IRFB3207ZPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,95 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 5 120V | HEXFET |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Junction Temperature | 175 °C | — |
| Avalanche Energy (EAS) | 1445 mJ | — |
| Boîtier / Format | PG-TO263-3-2 (D2PAK) | — |
| Type de montage | Surface Mount | Through Hole |
| Plage de température de fonctionnement | -55 °C to +175 °C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Statut RoHS | Compliant | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | N/A (through-hole) |
| Part Number | — | IRFB3207ZPBF |
| Technology | — | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Température de jonction en fonctionnement | — | -55 C to +175 C |
| Boîtier | — | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |