IPB100N12S305ATMA2 vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IPB100N12S305ATMA2 by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 β Active
Specification Comparison
| Parameter | IPB100N12S305ATMA2 | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 5 120V | HEXFET |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΞ©) at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Avalanche Energy (EAS) | 1445 mJ | β |
| Package / Case | PG-TO263-3-2 (D2PAK) | β |
| Mounting Type | Surface Mount | Through Hole |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | N/A (through-hole) |
| Part Number | β | IRFB3207ZPBF |
| Technology | β | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package | β | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |