IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon
N.º de pieza: IPB110P06LMATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.18 | $2,18 |
| 10 | $1.96 | $19,60 |
| 100 | $1.74 | $174,00 |
| 500 | $1.52 | $760,00 |
| 1.000 | $1.31 | $1.310,00 |
IPB110P06LMATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate the conduction channel between source and drain terminals. The P-channel variant conducts when the gate is pulled below the source potential, making it well-suited to high-side switching on the positive rail without needing a charge pump or bootstrap circuit. Within the broader taxonomy, MOSFETs sit under discrete semiconductors, alongside IGBTs, BJTs, and JFETs. The OptiMOS family specifically emphasizes low RDS(on) per unit silicon area, low gate charge (Qg), and low figure-of-merit (FOM = RDS(on) x Qg), reducing conduction and switching losses.
Key features include a maximum on-state resistance of 11 mOhm at VGS = 10 V and ID = 100 A, a maximum gate-threshold voltage of 2 V (typ. ~1.5 V), and a logic-level-compatible drive that simplifies interface to 3.3 V / 5 V microcontrollers. The D2PAK (TO-263) package provides a large exposed metal tab for PCB heatsinking, achieving low thermal resistance from junction to case. The part is rated for an operating junction temperature up to 175 C, supporting demanding automotive and industrial environments.
Architecturally, the IPB110P06LM uses Infineon's advanced trench MOSFET process, which maximizes channel density per unit area while keeping gate charge low. This combination yields a low FOM that improves efficiency in both conduction (lower RDS(on)) and switching (lower Qg for faster edge rates) regimes, important for SMPS and hot-swap designs.
Typical applications include battery management (BMS) charge/discharge switches, load switches in 12 V/24 V systems, reverse-polarity protection circuits, motor drive H-bridges (high-side position), and hot-swap controllers in telecom/datacom racks. The logic-level gate threshold makes it directly compatible with GPIO-driven designs without a dedicated gate driver IC.
A primary design consideration is thermal management. With 11 mOhm RDS(on) at 100 A, full-load conduction loss is around 110 W, requiring a substantial copper pour or external heatsink on the D2PAK tab. Designers should also include a gate-source resistor (typ. 10-100 kOhm) to prevent inadvertent turn-on from Miller-coupling transients, and a TVS or snubber across drain-source for inductive loads.
Alternativas directas para IPB110P06LMATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPB110P06LMATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Operating Temperature Range, FET Type, Drain-Source Voltage (VDS).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPB110P06LM
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IRFB7545PBF
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Ver hoja de datos →IPB110P06LMATMA1 Valores máximos y características eléctricas
| FET Type | P-Channel |
| Technology | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TC=25C | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | +/-20 V |
| Rango de temperatura de funcionamiento | -55 C to +175 C (TJ) |
| Encapsulado / Carcasa | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Tipo de montaje | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Gate Drive Level | Logic-level compatible |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de IPB110P06LMATMA1
| Pin 1 | Gate — Gate control input (logic-level compatible) |
| Pin 2 | Drain — Drain terminal (also connected to metal mounting tab) |
| Pin 3 | Source — Source terminal |
Área de funcionamiento seguro - IPB110P06LMATMA1
Aplicaciones típicas
IPB110P06LMATMA1 es adecuado para 6 aplicacións: Battery Management System (BMS) Charge/Discharge Switch, Reverse Polarity Protection Circuit, High-Side Load Switch in 12 V / 24 V Industrial Systems, Hot-Swap / Inrush Current Limiter, Automotive 12 V / 24 V Motor Drive (H-Bridge High-Side), DC Load Switch for Server / Datacenter 12 V Rails.
Battery Management System (BMS) Charge/Discharge Switch
The IPB110P06LMATMA1's P-channel polarity makes it ideal for high-side switching on the positive battery rail without a charge pump or bootstrap. With 60 V VDS, 100 A continuous drain current, and 11 mOhm RDS(on), it easily handles 12 V/24 V Li-ion packs up to several kW. The logic-level gate threshold (VGS(th) max 2 V) enables direct GPIO drive from a BMS AFE such as the LTC6813. The D2PAK package's large tab dissipates 300 W onto a copper pour, supporting sustained high-current operation during pre-charge and active balancing. According to Infineon's OptiMOS P-channel design guide, this part family is targeted specifically at battery management and reverse-polarity protection.
Recomendado
Reverse Polarity Protection Circuit
Used as the high-side P-channel reverse-polarity guard between battery and load, the IPB110P06LMATMA1's 60 V VDS provides safe headroom above 24 V transient spikes (ISO 7637-2). With RDS(on) = 11 mOhm, voltage drop at 50 A continuous load is only 0.55 V - lower than a Schottky diode solution, and eliminating diode heat dissipation entirely. The Infineon datasheet recommends this P-channel OptiMOS family for reverse-polarity protection due to its low FOM and avalanche ruggedness. A simple gate-source resistor (typ. 100 kOhm) holds the device off during battery swap or transient conditions.
Recomendado
High-Side Load Switch in 12 V / 24 V Industrial Systems
In 24 V industrial automation racks, the IPB110P06LMATMA1 enables GPIO-controlled high-side load switching up to 100 A continuous. Its 60 V VDS rating provides margin above nominal 24 V plus transient surges from inductive loads, while the 11 mOhm RDS(on) keeps conduction loss under 5 W at 20 A typical industrial load. The D2PAK footprint allows compact SMD assembly with PCB copper heatsinking. The logic-level gate threshold eliminates the need for a dedicated gate driver IC, reducing BOM cost in PLCs, distributed I/O modules, and motor control auxiliaries.
Recomendado
Hot-Swap / Inrush Current Limiter
The IPB110P06LMATMA1 serves as the main pass element in telecom/datacom hot-swap controllers for -48 V distribution. Its 100 A continuous rating and 11 mOhm RDS(on) handle the steady-state load after inrush, while the 60 V VDS and 300 W power dissipation allow brief inrush current peaks (with appropriate SOA derating) during bulk-capacitor charging on the load card. The OptiMOS process provides low thermal resistance, simplifying heatsink design in the densely packed shelf environment. Pair with a hot-swap controller such as the LTC4215 or ADM1073 for full protection.
Recomendado
Automotive 12 V / 24 V Motor Drive (H-Bridge High-Side)
In automotive H-bridge drivers for window lifts, seat adjusters, and auxiliary pumps, the IPB110P06LMATMA1 occupies the high-side position. Its 60 V VDS provides margin above the 35 V max load-dump transient (ISO 16750-2), and 100 A continuous current handles peak motor inrush. The -55 C to +175 C junction temperature range covers underhood environments. The D2PAK package is AEC-Q-style robust and widely accepted in automotive designs. OptiMOS technology's low FOM reduces switching losses at the 20 kHz PWM frequencies typical of automotive motor control.
Recomendado
DC Load Switch for Server / Datacenter 12 V Rails
The IPB110P06LMATMA1 handles 12 V server rail switching in power-distribution units (PDUs) and intermediate bus converters. At 12 V and 50 A typical, conduction loss is approximately 27 W - within the 300 W dissipation budget of the D2PAK package on a 2 oz copper pour. The OptiMOS P-channel enables high-side switch with simple gate drive from a hot-swap controller. Infineon's datasheet highlights the part for low- and medium-power battery management and load switching, both relevant to datacenter power architectures. The 60 V VDS provides safety margin beyond 12 V nominal.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPB110P06LMATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPB110P06LM | IPB100N04S4H2ATMA1 | IRF4905LPBF | IRFB7545PBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies (legacy IR) | Infineon Technologies (legacy IR) |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO262-3 (I2PAK, through-hole) | PG-TO220AB (through-hole) |
| Polarity | P-Channel | P-Channel | N-Channel | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | 40 V | -55 V | 60 V |
| Continuous Drain Current (ID @ TC=25C) | 100 A | 100 A | 100 A | 74 A | 95 A |
| RDS(on) max @ VGS=10V | 11 mOhm | 11 mOhm | 4.0 mOhm | 20 mOhm | 5.9 mOhm |
| Gate Threshold (VGS(th) max) | 2 V (logic-level) | 2 V | 3.5 V (standard level) | 4 V (standard level) | 4 V (standard level) |
| Power Dissipation (PD max @ TC=25C) | 300 W | 300 W | 300 W | 200 W | 230 W |
| Unit Price (qty 1000) | $1.31 | $1.28 (estimated, same die) | $1.45 | $1.60 | $1.20 |
Diferenciadores clave
- P-channel polarity with logic-level gate drive (frente a IPB100N04S4H2ATMA1)
- Higher continuous drain current at lower RDS(on) (frente a IRF4905LPBF)
- OptiMOS technology with low figure-of-merit (frente a IRFB7545PBF (legacy IR technology))
Notas de diseño
Estimated: At ID = 100 A and RDS(on) = 11 mOhm, conduction loss is approximately 110 W. The PG-TO263-3-2 (D2PAK) tab thermal resistance junction-to-case is typically around 0.5 C/W; with a 25 C/W junction-to-ambient on standard 2 oz copper, junction temperature can exceed 175 C. A copper pour of at least 25 cm squared (1 oz copper) or external heatsink on the tab is required for sustained high-current operation. Derate linearly per the SOA curve at elevated case temperatures.
Place a 100 kOhm gate-source resistor directly across the GS pins to prevent inadvertent turn-on from Miller-coupling transients during drain-voltage slewing. Keep the gate-drive trace short and route the high-current drain/source paths with wide copper pours to minimize parasitic inductance. The D2PAK tab should be soldered to a flooded copper pad on the top layer, with thermal vias to inner copper planes for two-sided heat spreading.
Critical: Do not exceed VGS = +/-20 V. Although the part is logic-level compatible, the absolute maximum VGS rating of 20 V applies; for high-side switching use a Zener clamp (15 V) from gate to source if the gate driver is exposed to transients. For inductive loads (relays, motors, solenoids), include a freewheeling diode or TVS across drain-source to clamp the turn-off spike below 60 V. Always check avalanche energy rating in the datasheet before designing inductive-switching circuits.
Información de cumplimiento
RoHS compliant and lead-free per Infineon product page. AEC-Q100 automotive qualification status not explicitly stated in retrieved data - verify with Infineon for automotive applications.
