IPC100N04S5L1R1ATMA1 vs IPC100N04S51R7ATMA1 Comparación
Comparación detallada lado a lado de IPC100N04S5L1R1ATMA1 por Infineon y IPC100N04S51R7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC100N04S5L1R1ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Tipo de transistor | N-Channel Enhancement Mode | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| On-Resistance RDS(on) max | 1.1 mΩ | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Gate Threshold Voltage VGS(th) | Logic Level | [DATA_NEEDED: VGS(th) value] |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SS08 leadless) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (unlimited floor life, 260 °C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | 100% tested |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Estado RoHS | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |