IPC100N04S5L1R1ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R1ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R1ATMA1
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 β ActiveInfineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R1ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | β |
| Transistor Type | N-Channel Enhancement Mode | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| On-Resistance RDS(on) max | 1.1 mΞ© | β |
| Power Dissipation (PD) at TC | 150 W | β |
| Gate Threshold Voltage VGS(th) | Logic Level | [DATA_NEEDED: VGS(th) value] |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (unlimited floor life, 260 Β°C peak reflow) | MSL1 (260 Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Tested | 100% avalanche tested | 100% tested |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Series | β | OptiMOS-5 |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualified | β | Yes |
| RoHS Status | β | Compliant (Green Product) |
| Built-in Body Diode | β | Yes |