IPC50N04S5L5R5ATMA1 vs IAUA120N04S5N014AUMA1 Comparación
Comparación detallada lado a lado de IPC50N04S5L5R5ATMA1 por Infineon y IAUA120N04S5N014AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ ActivoInfineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC50N04S5L5R5ATMA1 | IAUA120N04S5N014AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $2,18 |
| Tipo de transistor | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] |
| Encapsulado | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-HSOF-5-2 (sTOLL) |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUA120N04S5N014AUMA1 |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | — | 1.4 mΩ |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 136 W |
| Recuento de pines | — | 5 + Tab (6 effective) |
| Gate Drive | — | Enhancement Mode |
| Automotive Qualification | — | AEC-Q101 |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | — | Yes (100% avalanche tested) |