IPD082N10N3GATMA1 vs IPD30N10S3L34ATMA1 Comparación
Comparación detallada lado a lado de IPD082N10N3GATMA1 por Infineon y IPD30N10S3L34ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ ActivoInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD082N10N3GATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,14 | $0,38 |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | -55°C to +175°C |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK), surface mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Estado RoHS | Compliant | — |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| Product Family | — | OptiMOS-T2 |
| Tipo de transistor | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| Encapsulado | — | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |