IPD30N10S3L34ATMA2 vs IPD30N06S2L13ATMA4 Comparación
Comparación detallada lado a lado de IPD30N10S3L34ATMA2 por Infineon y IPD30N06S2L13ATMA4 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ ActivoComparación de especificaciones
| Parámetro | IPD30N10S3L34ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $0,48 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | Planar (OptiMOS) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Estado RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Encapsulado | — | PG-TO252-3-11 (DPAK) |
| Temperatura de funcionamiento | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Recuento de pines | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |