IPD30N10S3L34ATMA2 vs IPD30N06S2L13ATMA4 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA2 by Infineon and IPD30N06S2L13ATMA4 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.48 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| Pulsed Drain Current (I_DM) | 180 A | β |
| Power Dissipation (P_D, Tc) | 57 W | β |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | β |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | β |
| Total Gate Charge (Qg) max | 31 nC | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | β |
| Technology | OptiMOS-T (trench) | Planar (OptiMOS) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS |
| Channel Type | β | N-Channel |
| Mode | β | Enhancement |
| Drain-Source Voltage (Vds) | β | 55 V |
| Continuous Drain Current (Id) | β | 30 A (Tc) |
| Power Dissipation (Pd) | β | 136 W (Tc) |
| Package | β | PG-TO252-3-11 (DPAK) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (Tj) |
| MSL (Moisture Sensitivity Level) | β | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) |
| Lead-Free / RoHS | β | Yes (Green Package) |
| Avalanche Tested | β | 100 % production-tested |
| On-State Resistance (Rds(on)) | β | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | β | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | β | [DATA_NEEDED: trr typ] |
| Pin Count | β | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | β | Yes (T&R per IEC 60286-3) |