IPD60R145CFD7ATMA1 vs IPB60R165CPATMA1 Comparación
Comparación detallada lado a lado de IPD60R145CFD7ATMA1 por Infineon y IPB60R165CPATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ ActivoInfineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD60R145CFD7ATMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $1,78 |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | CoolMOS CP (superjunction, N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Encapsulado | TO-252AA (DPAK) surface mount | PG-TO263-3-2 (D2PAK-2) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Tipo de montaje | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant (Pb-free lead plating) |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |