IPD60R145CFD7ATMA1 vs IPB60R165CPATMA1 对比

详细并排对比 IPD60R145CFD7ATMA1 出自 Infineon 和 IPB60R165CPATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPD60R145CFD7ATMA1 IPB60R165CPATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $1.78
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) CoolMOS CP (superjunction, N-Channel)
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
封装 TO-252AA (DPAK) surface mount PG-TO263-3-2 (D2PAK-2)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
工作温度 -55C to +150C (junction) —
安装类型 Surface Mount (DPAK, 3-pin + tab) Surface Mount
引脚数量 3 (Gate, Drain, Source) —
Series CoolMOS CFD7 —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Compliant (Pb-free lead plating)
Target Application ZVS / LLC resonant converters, soft switching —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 21 A
Power Dissipation (PD, Tc=25°C) — 192 W
On-Resistance RDS(on), max (VGS=10V) — 165 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Total Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) — -55°C to +150°C
JEDEC Qualification — Qualified per JEDEC for target applications
dv/dt Ruggedness — Extreme dv/dt rated
Polarity / Channel — N-Channel

数据手册与资源

浏览全部产品 创建 BOM 获取报价