IPD60R145CFD7ATMA1 vs IPB60R165CPATMA1 Comparaison
Comparaison détaillée côte à côte de IPD60R145CFD7ATMA1 par Infineon et IPB60R165CPATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ ActifInfineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPD60R145CFD7ATMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,05 | $1,78 |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | CoolMOS CP (superjunction, N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Boîtier | TO-252AA (DPAK) surface mount | PG-TO263-3-2 (D2PAK-2) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Température de fonctionnement | -55C to +150C (junction) | — |
| Type de montage | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Nombre de broches | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant | Compliant (Pb-free lead plating) |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |