IPD60R280P7SAUMA1 vs BSC016N06NSATMA1 Comparación
Comparación detallada lado a lado de IPD60R280P7SAUMA1 por Infineon y BSC016N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD60R280P7SAUMA1 | BSC016N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,65 |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID, Tc) | 12 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: VGS(th) typical value] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | OptiMOS™ 5 |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | 1 (unlimited) |
| Series | CoolMOS P7 (7th generation, 600 V) | — |
| Estado RoHS | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Total Gate Charge (Qg) | — | 71 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C |
| Gate Drive (recommended) | — | 10 V |