IPD60R280P7SAUMA1 vs BSC016N06NSATMA1 对比

详细并排对比 IPD60R280P7SAUMA1 出自 Infineon 和 BSC016N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ 量产中
Infineon
BSC016N06NSATMA1 BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 ✓ 量产中

规格对比

参数 IPD60R280P7SAUMA1 BSC016N06NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.65
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc) 12 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th) typical value]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel OptiMOS™ 5
封装 PG-TO252-3 (DPAK) PG-TDSON-8 FL (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
MSL 等级 1 1 (unlimited)
Series CoolMOS P7 (7th generation, 600 V) —
RoHS 状态 Compliant Compliant
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Total Gate Charge (Qg) — 71 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 139 W
工作温度范围 — -55 °C to +150 °C
Gate Drive (recommended) — 10 V

数据手册与资源

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