IPD60R280P7SAUMA1 vs BSC016N06NSATMA1 Comparison

Detailed side-by-side comparison of IPD60R280P7SAUMA1 by Infineon and BSC016N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ Active

Specification Comparison

Parameter IPD60R280P7SAUMA1 BSC016N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.65
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc) 12 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical)
Gate-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th) typical value]
Total Power Dissipation (Ptot, Tc) 53 W
Operating Junction Temperature (TJ) -40 °C to +150 °C
Technology CoolMOS P7 Superjunction (SJ) N-channel OptiMOS™ 5
Package PG-TO252-3 (DPAK) PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
Series CoolMOS P7 (7th generation, 600 V)
RoHS Status Compliant Compliant
Integrated ESD Protection Yes
Manufacturer Infineon Technologies
Product Series OptiMOS™ 5 60V
Channel Type N-Channel
Continuous Drain Current (ID, TA) 30 A
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ
Total Gate Charge (Qg) 71 nC
Power Dissipation (TA) 2.5 W
Power Dissipation (TC) 139 W
Operating Temperature Range -55 °C to +150 °C
Gate Drive (recommended) 10 V

Datasheets & Resources

Browse All Products Create BOM Request Quote