IPD60R600C6 vs IPD60R380C6ATMA1 Comparación

Comparación detallada lado a lado de IPD60R600C6 por Infineon y IPD60R380C6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro IPD60R600C6 IPD60R380C6ATMA1
Marca Infineon Infineon
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,42 $0,41
Manufacturer Infineon Technologies —
Series CoolMOS C6 —
FET Type N-Channel N-Channel
Technology Superjunction (CoolMOS) CoolMOS C6 Superjunction
Drain-to-Source Voltage (V DSS) 600 V —
Continuous Drain Current (I D) at T C = 25 C 7.3 A —
Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V 600 mOhm —
Maximum Power Dissipation (P D) at T C = 25 C 63 W —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical and minimum] —
Gate Charge (Q G) typical [DATA_NEEDED: Q G value] —
Temperatura de unión de funcionamiento -55 C to +150 C —
Encapsulado PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Tipo de montaje Surface Mount Surface Mount
Nivel MSL 1 [DATA_NEEDED: MSL level]
Estado RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
Drain-Tab Connection — Exposed pad (electrically connected to drain)

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