IPD60R600PFD7SAUMA1 vs IPD60R1K0PFD7SAUMA1 Comparación
Comparación detallada lado a lado de IPD60R600PFD7SAUMA1 por Infineon y IPD60R1K0PFD7SAUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD60R600PFD7SAUMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,45 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS PFD7 | CoolMOS PFD7 consumer / superjunction |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS) | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) | 6 A (Tc) | — |
| R_DS(on) Max | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A | — |
| Total Gate Charge (Q_g) | 8.5 nC | — |
| Output Capacitance (C_oss) | 8 pF @ 400 V | — |
| Power Dissipation (P_D) | 31 W (Tc) | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V (typ) | — |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55°C to +150°C (Tj) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Reel Quantity | 2500 | — |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max gate-source) |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| Rango de temperatura de funcionamiento | — | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |