IPD60R600PFD7SAUMA1 vs IPD60R1K0PFD7SAUMA1 Vergleich
Detaillierter Direktvergleich von IPD60R600PFD7SAUMA1 von Infineon und IPD60R1K0PFD7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD60R600PFD7SAUMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS PFD7 | CoolMOS PFD7 consumer / superjunction |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS) | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) | 6 A (Tc) | — |
| R_DS(on) Max | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A | — |
| Total Gate Charge (Q_g) | 8.5 nC | — |
| Output Capacitance (C_oss) | 8 pF @ 400 V | — |
| Power Dissipation (P_D) | 31 W (Tc) | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V (typ) | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55°C to +150°C (Tj) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Reel Quantity | 2500 | — |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max gate-source) |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| Betriebstemperaturbereich | — | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |