IPD70N10S312ATMA2 vs BSC076N06NS3GATMA1 Comparación
Comparación detallada lado a lado de IPD70N10S312ATMA2 por Infineon y BSC076N06NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ ActivoInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD70N10S312ATMA2 | BSC076N06NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,69 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | — |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Power Dissipation (Ptot, Tc=25C) | 125 W | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2.0 V to 3.5 V |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +150C |
| Encapsulado | PG-TO252-3-11 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 (unlimited floor life) | 1 (unlimited) |
| Avalanche Rated | Yes | — |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| RoHS Compliance | — | Compliant |
| Sin halógenos | — | Yes (per Infineon product page) |