IPD70N10S312ATMA2 vs BSC076N06NS3GATMA1 比較
詳細な並列比較: IPD70N10S312ATMA2 メーカー: Infineon および BSC076N06NS3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD70N10S312ATMA2 | BSC076N06NS3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.69 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | — |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Power Dissipation (Ptot, Tc=25C) | 125 W | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2.0 V to 3.5 V |
| 動作温度範囲 | -55C to +175C | -55C to +150C |
| パッケージ | PG-TO252-3-11 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| RoHS ステータス | Compliant | — |
| MSLレベル | 1 (unlimited floor life) | 1 (unlimited) |
| Avalanche Rated | Yes | — |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| RoHS Compliance | — | Compliant |
| ハロゲンフリー | — | Yes (per Infineon product page) |