IPD70R1K4P7SAUMA1 vs IPD80R1K4P7ATMA1 Comparación
Comparación detallada lado a lado de IPD70R1K4P7SAUMA1 por Infineon y IPD80R1K4P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD70R1K4P7SAUMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | 4 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 3.5 V (typ) |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | -55C to +150C |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | 3 (Gate, Drain/Tab, Source) |
| Technology | Superjunction (CoolMOS P7) | N-Channel Superjunction |
| Avalanche Energy Rated | Yes (100% avalanche tested) | Yes |
| ESD Protection | Integrated (per datasheet) | — |
| Estado RoHS | Compliant | Compliant |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Disipación de potencia (Ptot) | — | 32 W |
| REACH Status | — | Compliant |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Body Diode | — | Integrated, fast recovery |