IPD70R1K4P7SAUMA1 vs IPD80R1K4P7ATMA1 对比
详细并排对比 IPD70R1K4P7SAUMA1 出自 Infineon 和 IPD80R1K4P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD70R1K4P7SAUMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.52 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | 4 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 3.5 V (typ) |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| 工作结温 | -55C to +150C | -55C to +150C |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) | 3 (Gate, Drain/Tab, Source) |
| Technology | Superjunction (CoolMOS P7) | N-Channel Superjunction |
| Avalanche Energy Rated | Yes (100% avalanche tested) | Yes |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 状态 | Compliant | Compliant |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| 功耗（Ptot） | — | 32 W |
| REACH Status | — | Compliant |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Body Diode | — | Integrated, fast recovery |