IPD90N03S4L02ATMA1 vs IPT007N06NATMA1 Comparación
Comparación detallada lado a lado de IPD90N03S4L02ATMA1 por Infineon y IPT007N06NATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPD90N03S4L02ATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $2,84 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | — |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | — |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Encapsulado | PG-TO252-3-11 (DPAK, surface mount) | PG-HSOF-8-1 (TOLL) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | MSL 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Series | OptiMOS-T2 | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | — | 0.75 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | — | 375 W |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (TJ) |
| Configuration | — | Single N-channel |
| Gate Charge (QG) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | — | [DATA_NEEDED: RthJC] |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |