IPD90N03S4L02ATMA1 vs IPT007N06NATMA1 对比

详细并排对比 IPD90N03S4L02ATMA1 出自 Infineon 和 IPT007N06NATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ 量产中

规格对比

参数 IPD90N03S4L02ATMA1 IPT007N06NATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.58 $2.84
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS-T2 trench OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 90 A —
Power Dissipation (PD) at Tc 136 W —
RDS(on) Max at VGS=10 V 2.2 mΩ —
RDS(on) Max at VGS=4.5 V [DATA_NEEDED: typical value at VGS=4.5 V] —
Gate Drive Voltage (VGS) 4.5 V to 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical value] —
工作结温 -55°C to +175°C —
Avalanche Rated 100% Avalanche tested —
封装 PG-TO252-3-11 (DPAK, surface mount) PG-HSOF-8-1 (TOLL)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) MSL 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant (Green Package) Compliant
Automotive Qualification AEC-Q101 qualified —
Series OptiMOS-T2 —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC=25C) — 300 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on), VGS=10V max) — 0.75 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Power Dissipation (PD, TC=25C) — 375 W
工作温度范围 — -55 C to +175 C (TJ)
Configuration — Single N-channel
Gate Charge (QG) — [DATA_NEEDED: total gate charge]
Avalanche Energy (EAS) — [DATA_NEEDED: single-pulse avalanche energy]
Thermal Resistance (RthJC max) — [DATA_NEEDED: RthJC]
Lead-Free — Yes
无卤 — Yes
Standard Pack Quantity — 3000 (Tape & Reel)

数据手册与资源

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