IPD90N03S4L02ATMA1 vs IPT007N06NATMA1 Vergleich
Detaillierter Direktvergleich von IPD90N03S4L02ATMA1 von Infineon und IPT007N06NATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD90N03S4L02ATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $2,84 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | — |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | — |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Gehäuse | PG-TO252-3-11 (DPAK, surface mount) | PG-HSOF-8-1 (TOLL) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | MSL 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Series | OptiMOS-T2 | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | — | 0.75 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | — | 375 W |
| Betriebstemperaturbereich | — | -55 C to +175 C (TJ) |
| Configuration | — | Single N-channel |
| Gate Charge (QG) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | — | [DATA_NEEDED: RthJC] |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |