IPG20N04S4L07ATMA1 vs IPD50N04S408ATMA1 Comparación
Comparación detallada lado a lado de IPG20N04S4L07ATMA1 por Infineon y IPD50N04S408ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPG20N04S4L07ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $0,69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ T2 | — |
| FET Type | 2x N-Channel (Dual, Independent) | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 20 A | — |
| RDS(on) Max @ VGS=10V | 7.2 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation (PD) Max | 65 W | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Encapsulado | PG-TDSON-8-4 (TDSON-8-4) | PG-TO252-3-313 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualification | Qualified | — |
| Avalanche Tested | 100% (per datasheet) | 100 % Avalanche tested |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | — |
| Product Family | — | OptiMOS-T2 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |