IPG20N04S4L07ATMA1 vs IPD50N04S408ATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S4L07ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPG20N04S4L07ATMA1 IPD50N04S408ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ T2 —
FET Type 2x N-Channel (Dual, Independent) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 20 A —
RDS(on) Max @ VGS=10V 7.2 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation (PD) Max 65 W —
Operating Junction Temperature -55°C to +175°C —
Package PG-TDSON-8-4 (TDSON-8-4) PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
Logic-Level Gate Drive Yes (4.5V VGS fully enhanced) —
MSL Level MSL1 (per JEDEC J-STD-020, 260°C peak reflow) MSL1 (260 °C peak reflow)
AEC-Q101 Qualification Qualified —
Avalanche Tested 100% (per datasheet) 100 % Avalanche tested
RoHS / Lead-Free RoHS compliant, lead-free terminations —
Product Family — OptiMOS-T2
Polarity — N-Channel
Mode — Enhancement-mode
Drain-Source Voltage (V DS) — 40 V
Continuous Drain Current (I D, Tc) — 50 A
Power Dissipation (P D, Tc) — 46 W
Operating Temperature Range — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Green Package (RoHS) — RoHS compliant
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical]
On-State Resistance (R DS(on)) — [DATA_NEEDED: R DS(on) at V GS = 10 V]
Total Gate Charge (Q G) — [DATA_NEEDED: Q G typical]

Datasheets & Resources

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