IPN60R2K0PFD7SATMA1 vs IPN95R3K7P7ATMA1 Comparación
Comparación detallada lado a lado de IPN60R2K0PFD7SATMA1 por Infineon y IPN95R3K7P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
IPN95R3K7P7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPN60R2K0PFD7SATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,28 | $0,44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS PFD7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (Tc) | 3 A | — |
| Power Dissipation (Tc) | 6 W | — |
| RDS(on) typical @ VGS=10V | 2.0 Ohm | — |
| RDS(on) max @ VGS=10V | 1.626 Ohm (per Infineon product page) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | 3.8 nC @ 10 V (per UTMel listing) | — |
| Input Capacitance (Ciss) | 134 pF @ 400 V (per UTMel listing) | — |
| Technology | CoolMOS superjunction | Super-junction (CoolMOS P7) |
| Encapsulado | PG-SOT223-3-1 (SOT-223) | PG-SOT223 (3-pin + tab, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant (per Newark listing) | Compliant |
| Series | — | CoolMOS P7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 950 V |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Temperatura de unión de funcionamiento | — | -55 C to +150 C |
| Lead-Free | — | Yes |