IPN60R2K0PFD7SATMA1 vs IPN95R3K7P7ATMA1 对比

详细并排对比 IPN60R2K0PFD7SATMA1 出自 Infineon 和 IPN95R3K7P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ 量产中

规格对比

参数 IPN60R2K0PFD7SATMA1 IPN95R3K7P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.28 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS PFD7 —
Channel Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (Tc) 3 A —
Power Dissipation (Tc) 6 W —
RDS(on) typical @ VGS=10V 2.0 Ohm —
RDS(on) max @ VGS=10V 1.626 Ohm (per Infineon product page) —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 3.8 nC @ 10 V (per UTMel listing) —
Input Capacitance (Ciss) 134 pF @ 400 V (per UTMel listing) —
Technology CoolMOS superjunction Super-junction (CoolMOS P7)
封装 PG-SOT223-3-1 (SOT-223) PG-SOT223 (3-pin + tab, surface mount)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: operating temperature range] —
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant (per Newark listing) Compliant
Series — CoolMOS P7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 950 V
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
工作结温 — -55 C to +150 C
Lead-Free — Yes

数据手册与资源

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