IPP069N20NM6AKSA1 vs IPB60R040CFD7ATMA1 Comparación
Comparación detallada lado a lado de IPP069N20NM6AKSA1 por Infineon y IPB60R040CFD7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ ActivoInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPP069N20NM6AKSA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,10 | $5,19 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | — |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55°C to +150°C |
| Encapsulado | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | PG-TO263-3-2 (D2PAK) |
| Tipo de montaje | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | N/A (through-hole package) | 1 |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Disipación de potencia (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |