IPP069N20NM6AKSA1 vs IPB60R040CFD7ATMA1 비교
다음의 상세 나란히 비교: IPP069N20NM6AKSA1 제조: Infineon 및 IPB60R040CFD7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPP069N20NM6AKSA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.10 | $5.19 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | — |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| 동작 온도 범위 | -55C to +175C | -55°C to +150°C |
| 패키지 | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | PG-TO263-3-2 (D2PAK) |
| 실장 유형 | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | Superjunction (SJ) N-Channel MOSFET |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 레벨 | N/A (through-hole package) | 1 |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 전력 손실 (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |