IPP069N20NM6AKSA1 vs IPB60R040CFD7ATMA1 Comparaison
Comparaison détaillée côte à côte de IPP069N20NM6AKSA1 par Infineon et IPB60R040CFD7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ ActifInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPP069N20NM6AKSA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,10 | $5,19 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | — |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Plage de température de fonctionnement | -55C to +175C | -55°C to +150°C |
| Boîtier | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | PG-TO263-3-2 (D2PAK) |
| Type de montage | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Niveau MSL | N/A (through-hole package) | 1 |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Dissipation de puissance (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |