IPP069N20NM6AKSA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPP069N20NM6AKSA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPP069N20NM6AKSA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.10 | $5.19 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 200 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | β |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +150Β°C |
| Package | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | Superjunction (SJ) N-Channel MOSFET |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | N/A (through-hole package) | 1 |
| Tab Connection | Electrically connected to Drain | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |