IQDH88N06LM5ATMA1 vs BSC050N04LSGATMA1 Comparación
Comparación detallada lado a lado de IQDH88N06LM5ATMA1 por Infineon y BSC050N04LSGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
IQDH88N06LM5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQDH88N06LM5ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,05 | $0,41 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 3 (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | 40 V |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | ±20 V |
| Drain Current (ID) Continuous at Ta | 42 A | — |
| Drain Current (ID) Continuous at Tc | 447 A | — |
| RDS(on) Max at VGS=10V | 0.86 mOhm | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 333 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Encapsulado | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: TJ max] | -55C to +150C |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |