IQDH88N06LM5ATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5ATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5ATMA1
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
IQDH88N06LM5ATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 3 (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | 40 V |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | Β±20 V |
| Drain Current (ID) Continuous at Ta | 42 A | β |
| Drain Current (ID) Continuous at Tc | 447 A | β |
| RDS(on) Max at VGS=10V | 0.86 mOhm | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 333 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: TJ max] | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |