IQDH88N06LM5ATMA1 vs IPB60R040CFD7ATMA1 Comparación
Comparación detallada lado a lado de IQDH88N06LM5ATMA1 por Infineon y IPB60R040CFD7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
IQDH88N06LM5ATMA1 ✓ ActivoInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQDH88N06LM5ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,05 | $5,19 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | Superjunction (SJ) N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Drain Current (ID) Continuous at Ta | 42 A | — |
| Drain Current (ID) Continuous at Tc | 447 A | — |
| RDS(on) Max at VGS=10V | 0.86 mOhm | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 333 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Encapsulado | PG-TSON-8-9 (PQFN 5x6) | PG-TO263-3-2 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: TJ max] | -55°C to +150°C |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Disipación de potencia (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |