IQDH88N06LM5ATMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5ATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5ATMA1
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
IQDH88N06LM5ATMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $5.19 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench) | Superjunction (SJ) N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Drain Current (ID) Continuous at Ta | 42 A | β |
| Drain Current (ID) Continuous at Tc | 447 A | β |
| RDS(on) Max at VGS=10V | 0.86 mOhm | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 333 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: TJ max] | -55Β°C to +150Β°C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Product Family | β | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |