IQDH88N06LM5CGSCATMA1 vs IQDH88N06LM5ATMA1 Comparación
Comparación detallada lado a lado de IQDH88N06LM5CGSCATMA1 por Infineon y IQDH88N06LM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
IQDH88N06LM5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQDH88N06LM5CGSCATMA1 | IQDH88N06LM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,31 | $3,05 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Corriente de drenador continua (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Disipación de potencia (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ) | [DATA_NEEDED: TJ max] |
| Encapsulado | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TSON-8-9 (PQFN 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Drain Current (ID) Continuous at Ta | — | 42 A |
| Drain Current (ID) Continuous at Tc | — | 447 A |
| RDS(on) Max at VGS=10V | — | 0.86 mOhm |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 333 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |