IQDH88N06LM5CGSCATMA1 vs IQDH88N06LM5ATMA1 对比

详细并排对比 IQDH88N06LM5CGSCATMA1 出自 Infineon 和 IQDH88N06LM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ 量产中
Infineon
IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 ✓ 量产中

规格对比

参数 IQDH88N06LM5CGSCATMA1 IQDH88N06LM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.31 $3.05
晶体管类型 N-Channel MOSFET —
Technology OptiMOS 5 (trench) OptiMOS 5 (trench)
Drain-Source Voltage (V(BR)DSS) 60 V —
Continuous Drain Current (Ta=25°C) 42 A —
连续漏极电流(TC=25°C) 447 A —
On-Resistance RDS(on) typical @ VGS=10V 0.86 mΩ —
Power Dissipation (Ta=25°C) 3 W —
功耗(TC=25°C) 333 W —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Gate Charge Qg typical [DATA_NEEDED: Qg typical nC] —
工作温度范围 -55°C to +175°C (TJ) [DATA_NEEDED: TJ max]
封装 PG-WHTFN-9-U02 (PQFN 5x6) PG-TSON-8-9 (PQFN 5x6)
安装类型 Surface Mount Surface Mount
引脚数量 9 (with exposed pad) —
Cooling Dual-side cooling capable —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Polarity N-Channel —
Configuration Single —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Drain Current (ID) Continuous at Ta — 42 A
Drain Current (ID) Continuous at Tc — 447 A
RDS(on) Max at VGS=10V — 0.86 mOhm
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 333 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Manufacturer — Infineon Technologies
Series — OptiMOS 5

数据手册与资源

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