IQE065N10NM5CGSCATMA1 vs IQE013N04LM6ATMA1 Comparación
Comparación detallada lado a lado de IQE065N10NM5CGSCATMA1 por Infineon y IQE013N04LM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE065N10NM5CGSCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $0,71 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2 V (typ) |
| Encapsulado | PG-WHTFN-9-1 (Source-Down) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS N-channel trench MOSFET |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55 °C to +175 °C |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |