IQE220N15NM5CGSCATMA1 vs IPTC054N15NM5ATMA1 Comparación
Comparación detallada lado a lado de IQE220N15NM5CGSCATMA1 por Infineon y IPTC054N15NM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ ActivoInfineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE220N15NM5CGSCATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,18 | $1,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 (IPT family) |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | [DATA_NEEDED: typical VGS(th) value] |
| Encapsulado | PG-WHTFN-9 (Source-Down) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Tipo de montaje | Surface Mount | Surface Mount (top-side cooled) |
| Technology | OptiMOS 5, Source-Down | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Estado RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TA=25°C | — | 17.5 A |
| Continuous Drain Current (ID) at TC=25°C | — | 143 A |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Power Dissipation (PD) at TC=25°C | — | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | — | 5.4 mΩ |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Total Gate Charge (Qg) typical | — | 58 nC |
| Forward Body Diode Voltage (VSD) | — | 0.83 V |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |