IQEH46NE2LM7UCGSCATMA1 vs IQDH35N03LM5SCATMA1 Comparación
Comparación detallada lado a lado de IQEH46NE2LM7UCGSCATMA1 por Infineon y IQDH35N03LM5SCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ ActivoInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQEH46NE2LM7UCGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $2,05 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TC | 440 A | — |
| Continuous Drain Current (ID) at TA | 57 A | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 150 W | — |
| Maximum On-Resistance (RDS(on)) | 0.46 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Encapsulado | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Polarity / Channel Type | Single N-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Topology Suitability | Hard- and soft-switching | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |
| Nivel MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |