IR21834STRPBF vs IRS2011STRPBF Comparación
Comparación detallada lado a lado de IR21834STRPBF por Infineon y IRS2011STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR21834STRPBF | IRS2011STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $1,55 |
| Configuration | Half-Bridge | High-Side and Low-Side, Independent Channels |
| Input Type | Inverting, Non-Inverting | — |
| Número de salidas | 2 (High Side / Low Side) | 2 |
| Number of Drivers | 2 | — |
| Peak Source Current | 1.9 A | — |
| Peak Sink Current | 2.3 A | — |
| Supply Voltage (VCC) | 10 V to 20 V | 10 V to 20 V |
| Maximum Floating Supply Voltage | 600 V | — |
| Propagation Delay | 180 ns (typical) | — |
| Logic Input Compatibility | 3.3 V and 5 V | 3.3 V CMOS / LSTTL |
| Undervoltage Lockout | Yes (both channels) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes | Yes, dV/dt immune |
| Encapsulado | 14-SOIC (3.90 mm width) | 8-SOIC (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Estado RoHS | Compliant | Compliant (PBF suffix) |
| Función | — | Half-Bridge Gate Driver |
| Maximum Offset Voltage (High-Side) | — | 200 V |
| Output Current (Source / Sink) | — | 1 A typical / 1 A typical |
| Propagation Delay (ton/toff) | — | 60 ns typical |
| Delay Matching | — | 20 ns maximum |
| Bootstrap Supply | — | Integrated bootstrap diode, floating channel |
| Suitable Drivers | — | MOSFETs and IGBTs |