IRF2907ZSTRLPBF - 75V 170A N-Ch HEXFET MOSFET D2PAK | Infineon
N.º de pieza: IRF2907ZSTRLPBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.65 | $26,50 |
| 100 | $2.2 | $220,00 |
| 500 | $1.85 | $925,00 |
| 1.000 | $1.55 | $1.550,00 |
IRF2907ZSTRLPBF Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that conducts current between drain and source when a sufficient gate-source voltage is applied. Power MOSFETs are the workhorse switching devices in the discrete-semiconductors hierarchy, sitting below IGBTs and above signal-level FETs. Within Infineon's portfolio the IRF2907Z family targets 12 V/24 V/48 V automotive and industrial switching rails where ultra-low conduction loss and high current pulse capability are required.
Key features include 4.5 mOhm max RDS(on) at VGS = 10 V, repetitive avalanche rating up to TJ(max), fast switching speed for high-frequency PWM converters, and lead-free / RoHS-compliant construction. The D2PAK package provides a low thermal resistance path via its exposed metal tab, allowing the die to dissipate 300 W (at TC = 25 °C) when properly soldered to a PCB copper pad. The S suffix in the part number designates tape-and-reel orientation, while the LPBF suffix confirms lead-free termination.
Typical applications include high-current DC motor drives in automotive and industrial systems, synchronous-rectifier low-side switches in 24 V to 48 V buck converters, battery protection circuits for 12 V/24 V lead-acid and Li-ion packs, and solenoid/relay drivers. Designers also use it in audio amplifier output stages, uninterruptible power supplies (UPS), and welding inverter half-bridge switches where the avalanche rating provides additional safety margin during turn-off transients.
When designing with this MOSFET, calculate conduction loss as P = I_DS(RMS)^2 * RDS(on) and switching loss separately using Qg and the gate-driver current. The exposed tab must be soldered to a minimum 1 oz copper area of at least 1 square inch to keep the junction below 150 °C at full load. Heatsinking is not required at moderate currents, but at 100 A continuous the PCB copper itself becomes the heatsink.
Alternativas directas para IRF2907ZSTRLPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRF2907ZSTRLPBF (mismo factor de forma y huella) — difiere en Package, Technology, RoHS Status, Mounting Type, Operating Temperature Range.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRF2907ZSPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRF2907ZSTRLPBF-Q1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IRFB3077PBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB3207PBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB4110PBF
✅ Sustitución directa✓ En stock
$1.55 / unidad
Ver hoja de datos →IRFR4615TRLPBF
✅ Sustitución directa✓ En stock
$0.39 / unidad
Ver hoja de datos →IRF2907ZSTRLPBF Valores máximos y características eléctricas
| Transistor Polarity | N-Channel |
| Drain-Source Voltage V(BR)DSS | 75 V |
| Corriente de drenador continua (TC=25°C) | 170 A |
| RDS(on) max at VGS = 10 V | 4.5 mOhm |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V |
| Maximum Power Dissipation (TC = 25 C) | 300 W |
| Temperatura de unión de funcionamiento | -55 C to +175 C |
| Technology | IR HEXFET / IR MOSFET |
| Encapsulado | D2PAK (TO-263AB) surface mount |
| Recuento de pines | 3 (Gate, Drain, Source) |
| Tipo de montaje | Surface Mount (SMD) |
| Packaging | Tape and Reel (left orientation) |
| Lead-Free | Yes (PBF suffix) |
| Estado RoHS | Compliant |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) |
Configuración de pines de IRF2907ZSTRLPBF
| Pin 1 | Gate — Gate control input; voltage-driven (typically 10 V) |
| Pin 2 | Drain — Drain terminal; internally connected to metal tab |
| Pin 3 | Source — Source terminal; power return |
| Pin TAB | Drain (Tab) — Metal tab on bottom of package - electrically Drain, also thermal pad |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
IRF2907ZSTRLPBF es adecuado para 7 aplicacións: 24V Automotive Motor Drive, Synchronous Rectifier Low-Side Switch, Battery Protection and Hot-Swap, Solenoid and Relay Driver, Uninterruptible Power Supply (UPS) Inverter, Welding Inverter Half-Bridge, Audio Amplifier Output Stage.
24V Automotive Motor Drive
The IRF2907ZSTRLPBF is an excellent low-side switch for 24 V brushed DC motor drives in body controllers, electric power steering pumps, HVAC blower motors, and seat adjusters. Its 75 V V(BR)DSS provides 3x transient headroom over a 24 V load-dump spike (typically up to 35 V on 24 V systems), while 170 A silicon-limited current handles inrush currents from stalled rotors. The 4.5 mOhm RDS(on) keeps conduction loss low - at 30 A continuous drain current dissipation is only 4 W, well within the D2PAK thermal envelope with 2 oz copper PCB. Designers pair this MOSFET with a dedicated gate driver (1-2 A peak) to achieve switching frequencies above 20 kHz for silent PWM operation.
Recomendado
Synchronous Rectifier Low-Side Switch
In 24 V to 48 V buck converters and synchronous-rectifier forward converters, the IRF2907ZSTRLPBF is used as the low-side switch where its ultra-low 4.5 mOhm RDS(on) dramatically reduces conduction loss compared to Schottky rectifiers. At 50 A load the MOSFET dissipates 11.25 W versus 25 W for an equivalent Schottky, raising overall converter efficiency by 3-5%. The fast switching speed (50-100 ns tr/tf) supports 100 kHz+ switching frequencies. The exposed D2PAK tab solders directly to the PCB copper heat-spreader, removing the need for an external heatsink in chassis-mount designs. This topology is common in 48 V mild-hybrid DC-DC converters and telecom brick converters.
Recomendado
Battery Protection and Hot-Swap
The IRF2907ZSTRLPBF serves as the main disconnect MOSFET in 12 V/24 V lead-acid and Li-ion battery packs, where its 75 V rating handles full battery voltage plus inductive transient spikes during hot-plug events. The 170 A continuous current rating matches the discharge current of large e-scooter, e-bike, and 48 V mild-hybrid battery packs. The repetitive avalanche rating up to TJ(max) provides inherent protection during reverse-battery or load-dump events. The D2PAK surface-mount package enables automated assembly in high-volume pack production. Designers add a TVS diode across drain-source and a gate-source resistor of 10-100 kOhm to prevent parasitic turn-on.
Recomendado
Solenoid and Relay Driver
Industrial solenoid valves, pneumatic relays, and large contactor coils demand peak currents of 50-100 A during pull-in before settling to a lower hold current. The IRF2907ZSTRLPBF handles the peak inrush easily with its 170 A rating, while the 4.5 mOhm RDS(on) keeps the saturated switch voltage drop below 0.5 V at 100 A - minimizing coil driver dissipation. PWM at 10-25 kHz can be applied for proportional solenoid control. The repetitive avalanche rating protects the MOSFET when the solenoid inductance forces current to continue flowing at turn-off, allowing direct connection without external freewheeling diodes in many cases. This topology appears in factory automation, CNC machines, and process control valve banks.
Recomendado
Uninterruptible Power Supply (UPS) Inverter
Online UPS systems in the 1-10 kVA range use the IRF2907ZSTRLPBF as the low-side switch in 24 V or 48 V battery-to-AC inverter half-bridges. The 75 V rating provides ample margin over 48 V battery stacks including equalization voltage transients, while the 170 A current rating covers 3-5 kW inverter outputs. Synchronous-rectifier topology using these MOSFETs reaches 96%+ efficiency, far exceeding diode-rectified designs. The 300 W power dissipation rating at TC = 25 C with proper PCB copper allows fan-less operation in many designs. The exposed D2PAK tab enables direct thermal coupling to aluminum chassis plates in industrial UPS enclosures.
Recomendado
Welding Inverter Half-Bridge
Small inverter welders in the 100-200 A output class use the IRF2907ZSTRLPBF as the primary switching element in a 48 V to 80 V push-pull or full-bridge topology. The repetitive avalanche rating up to TJ(max) = 175 C is critical for welding inverters, where the transformer leakage inductance forces the MOSFET to absorb energy during turn-off - this part is rated to handle that stress continuously. The 4.5 mOhm RDS(on) limits conduction loss at the 100-150 A primary currents typical of small welders. The D2PAK package handles the pulsed power dissipation within its thermal mass when mounted on a 4-layer PCB with generous copper pours.
Recomendado
Audio Amplifier Output Stage
High-power class-D audio amplifiers in the 500 W to 2 kW range use the IRF2907ZSTRLPBF as the low-side switch in the output half-bridge. Its 4.5 mOhm RDS(on) keeps output-stage conduction loss below 1% at full power, preserving amplifier efficiency above 95%. The fast switching edge (under 50 ns rise/fall) enables 400 kHz+ PWM carrier frequencies, which push the LC filter crossover above the audible band. Total harmonic distortion plus noise (THD+N) below 0.01% is achievable. The 75 V V(BR)DSS is comfortable for +/- 35 V audio rails. The exposed tab is soldered to a substantial copper pour that doubles as the amplifier chassis thermal interface.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRF2907ZSTRLPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRF2907ZSPBF | IRFB3077PBF | IRFB3207PBF | IRFB4110PBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same |
| Drain-Source Voltage V(BR)DSS | 75 V | 75 V | 75 V | 75 V | 100 V |
| Continuous Drain Current (TC=25C) | 170 A | 170 A | 210 A | 180 A | 180 A |
| RDS(on) max at VGS=10V | 4.5 mOhm | 4.5 mOhm | 3.3 mOhm | 4.5 mOhm | 4.5 mOhm |
| Maximum Power Dissipation | 300 W | 300 W | 370 W | 330 W | 370 W |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) |
Diferenciadores clave
- Ultra-low RDS(on) per silicon area (frente a IRF9540NPBF (P-channel))
- 170A continuous current vs lower-rated alternatives (frente a IRFR4615TRLPBF (DPAK))
- 175C maximum junction temperature (frente a Standard 150C-rated MOSFETs)
Notas de diseño
Estimated: at 100 A continuous drain current and 4.5 mOhm RDS(on), conduction loss is 45 W. The D2PAK package has a junction-to-ambient thermal resistance of approximately 40 C/W on a 1 oz 1-square-inch copper pad, resulting in a junction temperature rise of 1800 C above ambient - far above the 175 C rating. Either increase copper area to 4+ square inches (reducing theta_JA to ~20 C/W) or use forced-air cooling. The drain tab MUST be soldered to the PCB for both electrical and thermal connection; thermal vias under the tab reduce junction-to-ambient resistance by 30-50%.
Place the gate-drive resistor (typically 10-100 Ohm) within 5 mm of the gate pin to suppress parasitic oscillation from the gate-source capacitance and PCB trace inductance. Use a kelvin-source connection for high-frequency switching: separate the power source path from the gate-drive source path with a small SMD resistor (1-10 Ohm) to decouple the source inductance. Keep the high-current drain loop area minimal by placing input capacitors close to the drain tab. A gate-source resistor of 10 kOhm from gate to source prevents false turn-on from dv/dt-induced Miller current during drain-voltage transitions.
Do not exceed VGS = +/-20 V - the gate oxide is rated for 20 V absolute maximum and 10 V nominal. Static-sensitive device: handle with proper ESD precautions. Do not operate in linear mode for sustained periods: the SOA curve shows DC operation is limited to ~4.5 A at 75 V VDS, so for switching applications ensure fast transitions through the linear region. For avalanche-rated designs, observe the repetitive avalanche energy (EAS) limit in the datasheet and add a TVS clamp if the application's stored energy exceeds the rating.
Información de cumplimiento
RoHS compliant and lead-free per Infineon datasheet. Standard industrial grade - for AEC-Q101 automotive qualification, request the AUIRF2907Z variant.
