IRF3710ZPBF vs IRF1310NPBF Comparación
Comparación detallada lado a lado de IRF3710ZPBF por Infineon y IRF1310NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF3710ZPBF | IRF1310NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,88 | $0,98 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 59 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 160 W | — |
| On-Resistance RDS(on) at VGS=10V | 18 mOhm (typical) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 82 nC (typical) | 73.3 nC |
| Maximum Junction Operating Temperature | 175 C | — |
| Gate Drive Voltage (Optimized) | 10 V | — |
| Encapsulado | TO-220AB (through-hole, 3 pins) | TO-220AB (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Pin Configuration | G-D-S (Gate-Drain-Source, standard TO-220) | — |
| Qualification Standard | JEDEC, Normal Level | — |
| Estado RoHS | Compliant (PBF suffix) | Compliant (PBF suffix) |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 36 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs value] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Maximum Junction Temperature | — | 175 C |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |