IRF3710ZPBF vs IRF1310NPBF Comparison

Detailed side-by-side comparison of IRF3710ZPBF by Infineon and IRF1310NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3710ZPBF IRF1310NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $0.98
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (Advanced Process) HEXFET
Drain-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 59 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Maximum Power Dissipation (Pd) at Tc=25C 160 W β€”
On-Resistance RDS(on) at VGS=10V 18 mOhm (typical) β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 82 nC (typical) 73.3 nC
Maximum Junction Operating Temperature 175 C β€”
Gate Drive Voltage (Optimized) 10 V β€”
Package TO-220AB (through-hole, 3 pins) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Pin Configuration G-D-S (Gate-Drain-Source, standard TO-220) β€”
Qualification Standard JEDEC, Normal Level β€”
RoHS Status Compliant (PBF suffix) Compliant (PBF suffix)
Lead-Free Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25C β€” 42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM value]
Gate-Source Voltage (VGS) max β€” Β±20 V
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V β€” 36 mOhm
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs value]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd value]
Power Dissipation (PD) at TC=25C β€” 160 W
Maximum Junction Temperature β€” 175 C
Operating Temperature Range β€” -55 C to +175 C

Datasheets & Resources

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